is considered a foundational "classic" in the field of semiconductor physics. Published originally in
Before we discuss "hot" physics, we must respect the fundamentals. Nicollian and Brews structured the universe of MOS around three components:
How to measure and extract their properties from capacitance.
Occurs when the applied voltage pushes majority carriers away from the interface, leaving behind a region of immobile, ionized dopant atoms. 3. Inversion
The simplest MOS device is a capacitor: a metal plate (the gate), an insulating oxide layer (typically SiO₂), and a semiconductor substrate (usually silicon). In an ideal MOS capacitor, we assume:
The book is renowned for its rigorous treatment of electrical measurement techniques used to characterize these structures. MOS Physics and Technology | PDF - Scribd
